Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides

Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries. Shallow Trench Isolation and Pre-Metal Dielectric are studied using electrical measurements performed after X-ray irradiations and isochronal annealing cycles. This paper shows that trapping properties of such isolation oxides can strongly differ from those of traditional thermal oxides usually used to process the gate oxide of Metal Oxide Semiconductor Field Effect Transistors. Buildup and annealing of both radiation-induced oxide-trap charge and radiation-induced interface traps are discussed as a function of the oxide type, foundry and bias condition during irradiation. Radiation-induced interface traps in such isolation oxides are shown to anneal below 100°C contrary to what is usually observed in thermal oxides. Implications for design hardening and radiation tests of CMOS Integrated Circuits are discussed

Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors

The total ionizing dose effects on image lag in pinned photodiode CMOS image sensors are investigated thanks to various device variants in order to isolate the major radiation induced effects on the charge transfer. It is shown that the main cause of the charge transfer degradation is the radiation induced defects generation in the pre-metal dielectric and in the transfer gate spacer vicinity which modifies the potential diagram at the photodiode/transfer gate interface by the creation of a potential pocket retaining the electrons that are not transferred. For 0.1 kGy(SiO2) 5 kGy(SiO2) the defects generated in the pre-metal dielectric influence the whole photodiode potential inducing a pinning voltage increase and degrading the charge transfer by enlarging the potential pocket effect which becomes the main image lag source. The reported results clarify the impact of ionizing radiation on the charge transfer suggesting radiation hardened by design solutions for future space or nuclear applications

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation

Coupled experiment/simulation approach for the design of radiation-hardened rare-earth doped optical fibers and amplifiers

We developed an approach to design radiation-hardened rare earth -doped fibers and amplifiers. This methodology combines testing experiments on these devices with particle swarm optimization (PSO) calculations. The composition of Er/Yb-doped phosphosilicate fibers was improved by introducing Cerium inside their cores. Such composition strongly reduces the amplifier radiation sensitivity, limiting its degradation: we observed a gain decreasing from 19 dB to 18 dB after 50 krad whereas previous studies reported higher degradations up to 0°dB at such doses. PSO calculations, taking only into account the radiation effects on the absorption efficiency around the pump and emission wavelengths, correctly reproduce the general trends of experimental results. This calculation tool has been used to study the influence of the amplifier design on its radiation response. The fiber length used to ensure the optimal amplification before irradiation may be rather defined and adjusted to optimize the amplifier performance over the whole space mission profile rather than before integration in the harsh environments. Both forward and backward pumping schemes lead to the same kind of degradation with our active fibers. By using this promising coupled approach, radiation-hardened amplifiers nearly insensitive to radiations may be designed in the future

Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach

We present an approach coupling a limited experimental number of tests with numerical simulations regarding the design of radiation-hardened (RH) rare earth (RE)-doped fiber amplifiers. Radiation tests are done on RE-doped fiber samples in order to measure and assess the values of the principal input parameters requested by the simulation tool based on particle swarm optimization (PSO) approach. The proposed simulation procedure is validated by comparing the calculation results with the measured degradations of two amplifiers made with standard and RH RE-doped optical fibers, respectively. After validation, the numerical code is used to theoretically investigate the influence of some amplifier design parameters on its sensitivity to radiations. Simulations show that the RE-doped fiber length used in the amplifier needs to be adjusted to optimize the amplifier performance over the whole space mission profile rather than to obtain the maximal amplification efficiency before its integration in the harsh environment. By combining this coupled approach with the newly-developed RH RE-doped fibers, fiber-based amplifiers nearly insensitive to space environment may be designed in the future

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

In this work, several studies on Total Ionizing Dose effects on Pinned Photodiode CMOS images sensors are presented. More precisely, the evolution of a parasitic signal called Random Telegraph Signal is analysed through several photodiode designs. It is shown that the population of pixels exhibiting this fluctuation depends on the design variants. This population also increases in a different way with the dose: the effects are not same considering a low or high X-rays irradiation. Moreover, a statistical analysis is realized in order to better caracterize the defects responsible for RTS. It turns out that electric field enhancement signature can appear in some specific cases

Investigations on the vulnerability of advanced CMOS technologies to MGy dose environments

This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation doses to evaluate their potential for high TID-hardened circuits. Such circuits will be used in several specific applications suc as safety systems of current or future nuclear power plants considering various radiation environments including normal and accidental operating conditions, high energy physics instruments, fusion experiments or deep space missions. Various device designs implemented in well established bulk silicon and Partially Depleted SOI technologies are studied here up to 3 MGy. Furthermore, new insights are given on the vulnerability of more advanced technologies including planar Fully Depleted SOI and multiple-gate SOI transistors at such high dose. Potential of tested technologies are compared and discussed for stand-alone integrated circuits

Mixed temperature and radiation effects on fluorine-doped optical fibers

Mixed temperature and radiation effects on fluorine-doped optical fibers

Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

The Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC) building blocks is explored in the Multi-MGy range using 60Co gamma-ray irradiations. The performances of the following CoC subcomponents are studied: radiation hardened (RH) pixel and photodiode designs, RH readout chain, Color Filter Arrays (CFA) and column RH Analog-to-Digital Converters (ADC). Several radiation hardness improvements are reported (on the readout chain and on dark current). CFAs and ADCs degradations appear to be very weak at the maximum TID of 6 MGy(SiO2), 600 Mrad. In the end, this study demonstrates the feasibility of a MGy rad-hard CMOS color digital camera-on-a-chip, illustrated by a color image captured after 6 MGy(SiO2) with no obvious degradation. An original dark current reduction mechanism in irradiated CMOS Image Sensors is also reported and discussed

Radiation Hardened Optical Frequency Domain Reflectometry Distributed Temperature Fiber-Based Sensors

We study the performance of Optical Frequency Domain Reflectometry (OFDR) distributed temperature sensors using radiation resistant single-mode optical fibers. In situ experiments under 10 keV X-rays exposure up to 1 MGy( SiO 2 ) were carried out with an original setup that allows to investigate combined temperature and radiation effects on the sensors within a temperature range from 30 ° C to 250 ° C. Obtained results demonstrate that optical fiber sensors based on Rayleigh technique are almost unaffected by radiation up to the explored doses. We show that a pre-thermal treatment stabilize the sensor performance increasing the accuracy on temperature measurement from ~ 5 ° C down to ~ 0.5 ° C by reducing the packaging-related errors (such as ones related to coating modification) that could be introduced during the measurement. These results are very promising for the future integration of Rayleigh based sensors in nuclear facilities